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863-CPD80R650G2

Model：
CPD80R650G2
Brand：
功成半导体
Batch No：
CPD80R650G2
Desc：
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Enquiry Quantity：
: N-channel Super Junction MOSFET
: TO-252
: 深沟槽超结MOS
: N-channel
: 560
: 650
: 8
: 800
: 超结器件（Super Junction MOSFET）实现N型和P型周期排列结型耐压层，引入高浓度等量异型电荷，从表面场
: CoolSemi SJ产品采用先进的超结技术和优化的设计结构，极低特征导通电阻（Rdson*A）优于Infineon C
: CPD80R650G2
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