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 Common MOSFETs Filter

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APM

Catalog: Unlimited

Common MOSFETs

Product Keyword: Unlimited

N+P沟道MOS,100V N+P-沟道MOS，开关MOS，N+P-MOS,N+P场效应管，N+P双MOS管

Typical application scheme: Unlimited

●蓄电池保护 ●负载开关 ●不间断电源

Qgs(nC): Unlimited

N沟道：Qgs=1.4nC,P沟道：Qgs=3.5nC,

Qg(nC): Unlimited

N沟道：Qg=7.6nC,P沟道：Qg=20nC,

Vgs(th)（V）: Unlimited

N沟道：Vgs(th)=3.0V,P沟道：Vgs(th)=-3.0V,

Rdson @4.5V(mΩ): Unlimited

N沟道：RDS(ON) < 300mΩ @ VGS=4.5V；P沟道：RDS(ON) < 230mΩ @ VGS=4.5

Rdson @10V(mΩ): Unlimited

N沟道：RDS(ON) < 75mΩ @ VGS=10V；P沟道：RDS(ON) < 210mΩ @ VGS=10V，

ESD HBM (KV): Unlimited

N沟道：FOM=0.57Ω.nC,P沟道：FOM=4.2Ω.nC

VGS (±V): Unlimited

VGS=±20，

ID（A）: Unlimited

N沟道：ID =8A，P沟道： ID =-6.5A ，

VDS(V): Unlimited

VDS = 100V,

MOQ（Pcs）: Unlimited

5000PCS,

Technology: Unlimited

AP8G06NF采用先进的沟槽技术 以提供优异的RDS（ON）、低栅极电荷和 栅极电压低至4.5V时的操作。

Polarity Configuration: Unlimited

N+P-沟道MOS，N+P双MOS

Channel Mode: Unlimited

Trench沟槽工艺N+P-MOS，
Selected Conditions: ●蓄电池保护 ●负载开关 ●不间断电源 N沟道：Qgs=1.4nC,P沟道：Qgs=3.5nC, N沟道：Vgs(th)=3.0V,P沟道：Vgs(th)=-3.0V, N沟道：FOM=0.57Ω.nC,P沟道：FOM=4.2Ω.nC AP8G06NF采用先进的沟槽技术 以提供优异的RDS（ON）、低栅极电荷和 栅极电压低至4.5V时的操作。 N+P-沟道MOS，N+P双MOS Trench沟槽工艺N+P-MOS， [ All Found Records 0 ]
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 Common MOSFETs

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