APM Primary Agent 12–250V Trench N-MOSFET AP5N10SI
- Model：
- AP5N10SI
- Brand：
- APM
- Batch No：
- AP5N10SI,APM MOS 管，100V N 沟道功率管，SOT89-3L,4.5V 低压 MOS, 锂电保护 MOS, 手机快充开关管，5A 场效应管，替代 STD5N10, 永源微
- Desc：
- -
- Stock：
- 120000 PCS
AP5N10SI 100V/5A N-Channel Enhancement Mode MOSFET | 4.5V Low Voltage Drive SOT89 Power Transistor
AP5N10SI is an N-channel enhancement power MOSFET manufactured by APM with advanced trench technology. It features 100V drain-source voltage rating and 5A continuous drain current. It supports a minimum 4.5V gate drive voltage, ultra-low Rds(on) and minimal gate charge, with an integrated reverse freewheeling diode to simplify peripheral rectifier circuits.
The SOT89 package delivers excellent thermal performance with max power dissipation up to 3.5W. Operating junction temperature ranges from -55°C to 150°C, with 15A peak pulse current withstand capability. Stable performance in low-voltage switching circuits such as lithium battery protection boards, mobile fast charging modules, wireless chargers and small DC-DC power supplies, with controlled temperature rise during long-running operation to avoid thermal breakdown.
Internal Circuit Schematic Diagram:
AP5N10SI Ordering & Packaging Specifications
| Part Number | Package Format | Marking Code | Standard Reel Pack |
|---|---|---|---|
| AP5N10SI | SOT89-3L | AP5N10SI XXX YYYY | 3000 PCS / Reel |
AP5N10SI Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameter Description | Rated Value | Unit |
|---|---|---|---|
| VDS | Drain-Source Breakdown Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID(25°C) | Continuous Drain Current @25°C | 5 | A |
| ID(70°C) | Continuous Drain Current @70°C | 3.6 | A |
| IDM | Peak Pulse Drain Current | 15 | A |
| PD | Max Power Dissipation @25°C | 3.5 | W |
| TSTG | Storage Temperature Range | -55 ~ 150 | °C |
| TJ | Operating Junction Temperature | -55 ~ 150 | |
| RθJA | Junction-to-Ambient Thermal Resistance | 85 | °C/W |
| RθJC | Junction-to-Case Thermal Resistance | 40 | °C/W |
Warning: Long-term operation beyond absolute maximum ratings will cause permanent MOSFET damage and drastically shorten the service life of fast charger and lithium protection PCBs.
AP5N10SI Electrical Characteristics (Tc=25°C)
| Parameter Symbol | Parameter Name | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | 100 | - | - | V |
| RDS(ON) | Drain-Source On Resistance | VGS=10V,ID=3A | - | 88 | 110 | mΩ |
| RDS(ON) | Drain-Source On Resistance | VGS=4.5V,ID=2A | - | 95 | 125 | mΩ |
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250uA | 1.2 | 1.6 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V,VGS=0V | - | - | 10 | uA |
| Qg | Total Gate Charge | VDS=60V,ID=2A | - | 25.5 | - | nC |
| Td(on) | Turn-On Delay Time | VDD=50V,ID=1A | - | 17.3 | - | ns |
| Td(off) | Turn-Off Delay Time | VDD=50V,ID=1A | - | 50 | - | ns |
| Ciss | Input Capacitance | VDS=15V,f=1MHz | - | 677 | - | pF |
AP5N10SI SOT89-3L Package Dimension Diagram
Key package dimensions: A=1.4~1.6mm, E=2.3~2.6mm, E1=3.94~4.25mm, pin pitch e=1.5mm, standard SOT89 footprint compatible with all regular SMT pick-and-place machines for mass production.
AP5N10SI Typical Electrical Characteristic Curves
AP5N10SI Application Scenarios
1. Lithium Battery Protection Boards: Li-ion & LiFePO4 over-current / over-voltage cut-off switch
2. Mobile & Digital Device Fast Charging Modules, 5V/12V Step-Down Switch Circuits
3. Wireless Charger Transmitter & Receiver Power Switches
4. Mini DC-DC Boost/Buck Converters, Portable Energy Storage Devices
5. Low-Voltage Power Control Circuits for Electric Toys & Small Home Appliances
AP5N10SI Drop-In Replacement Parts & Competitive Comparison
AP5N10SI offers full pin-to-pin compatibility with all mainstream domestic & imported 100V/5A SOT89 N-channel MOSFETs. It outperforms generic market MOSFETs in multiple key metrics as shown below:
| Comparison Item | AP5N10SI (Original APM) | Generic 100V SOT89 MOSFET |
|---|---|---|
| Minimum Gate Drive Voltage | Supports 4.5V low voltage, works with 5V MCU systems | Most only support 10V, sharp Rds(on) rise at low Vgs |
| Rds(on) @ VGS=10V | Typ 88mΩ, lower power loss & temperature rise | 130~180mΩ, high heating under load |
| Total Gate Charge | 25.5nC, faster switching speed | Above 35nC, high switching loss |
| Integrated Body Diode | Built-in freewheeling diode, eliminates external Schottky | Many versions without diode, extra BOM cost |
| Peak Pulse Current Capability | 15A surge withstand, robust against transient spikes | 8~10A max pulse, easy to fail under surge |
| Operating Temp Range | -55~150°C industrial wide temperature spec | -40~125°C, poor high/low temp stability |
Direct alternative parts: AP50N10, STD5N10, FDN5N10, SM5N10, YJ100N05. No PCB redesign required for replacement.
APM Power MOSFET Series Recommendation
| Part Number | Vds Rating | Continuous Current | Package | Typical Applications |
|---|---|---|---|---|
| AP5N10SI | 100V | 5A | SOT89-3L | Li-ion protection, mobile fast charger, wireless charger |
| AP3N60 | 600V | 3A | TO-252 | AC-DC adapters, small household power supplies |
| AP8N30 | 30V | 8A | SOT89 | High-current battery protection, automotive electronics |
| AP10P03 | 30V P-Channel | 10A | SOT23 | Portable device power management circuits |
About GSMicro Semiconductor
GSMicro Semiconductor (Shenzhen) Co., Ltd. (short name: GSMicro) was founded in 2023, with predecessor LUMENCHIP established in 2010. Headquartered in Shenzhen, China’s tech hub, we are a leading analog IC service brand focusing on mixed-signal chip R&D, technical implementation and eco-friendly smart electronics development.
GSMicro integrates global resources and breaks traditional single distribution & agency models. We built an all-in-one service system combining channel distribution, market analysis, custom technical design and one-stop component supply. Our self-owned IC lines and authorized agency brands operate side by side to deliver customized, profitable solutions for global clients. We provide exclusive design consultation and competitive power management & MCU solutions for electronics manufacturers, with top-tier agency and technical support service in the analog IC industry.
GSMicro maintains a complete product portfolio covering MCU, AI voice chips, power management IC, signal chain chips and power discrete devices, supporting voice wakeup, speech recognition, voice synthesis, NLP and intelligent dialogue algorithms. Our official authorized partners include DONGWOON, CR MICRO, CRHJ, APM, COOLSEMI, ANHI, Reasunos, OCX, MassChip, XLSEMI, NSIWAY, EGmicro, ChipWays, AISPEECH, Aerosemi and more well-known IC manufacturers.
GSMicro adheres to corporate values: Strive-Oriented, Customer-Centric, Value-Driven. We focus on mass-production technical support for agent chips to advance green semiconductor technology, ranking top in global analog IC distribution and solution services.
Official Website: https://www.gs-micro.com/en-us/
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